DMG7702SFG
Marking Information
G72 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
G72
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Steady
State
t<10s
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
12
9.5
16.0
12.7
9.5
7.5
13.0
10.3
A
A
A
A
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
I DM
I S
I AR
E AR
90
3.5
17
43
A
A
A
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t<10s
T A = +25°C
T A = +70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.89
0.55
145
74
2.2
1.3
58
31
11
-55 to +150
W
°C/W
W
°C/W
°C
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = +25°C
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
2 of 8
www.diodes.com
July 2012
? Diodes Incorporated
相关PDF资料
DMG8601UFG-7 MOSFET 2N-CH 20V 6.1A DFN
DMG8822UTS-13 MOSFET ARRAY 20V 4.9A 8TSSOP
DMG8880LK3-13 MOSFET N-CH 30V 11A TO252-3L
DMG9926UDM-7 MOSFET N-CH DUAL 20V 4.2A SOT-26
DMG9926USD-13 MOSFET 2N-CH 20V 8A SOP8L
DMN100-7 MOSFET N-CH 30V 1.1A SC59-3
DMN1019UFDE-7 MOSFET N CH 12V 11A U-DFN2020-6E
DMN2004DMK-7 MOSFET DUAL N-CHAN 20V SOT-26
相关代理商/技术参数
DMG8601UFG 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG8601UFG-7 功能描述:MOSFET LDO POSITIVE REG 2.7V/1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG8822UTS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG8822UTS-13 功能描述:MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG8880LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG8880LK3-13 功能描述:MOSFET N-Ch FET VDSS 20V VGSS 20V PD 1.68W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG8880LSS 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIO 30V 11.6A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIO, 30V, 11.6A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIO, 30V, 11.6A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V ;RoHS Compliant: Yes
DMG8880LSS-13 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube